# Spin-valley system in a gated MoS$_2$-monolayer quantum dot

## TL;DR

This paper proposes a realistic gate-defined MoS$_2$ monolayer quantum dot device that enables electrical control of spin and valley states for quantum computing, demonstrating potential for universal qubit gates.

## Contribution

It introduces a detailed model and numerical simulations of a MoS$_2$ quantum dot device capable of implementing single- and two-qubit gates via spin-valley control.

## Key findings

- Electrical control enables single- and two-qubit gates.
- Two-qubit gates are easier to realize than single-qubit gates.
- The device design is feasible with realistic potentials and electric fields.

## Abstract

The aim of presented research is to design a nanodevice based on a gate-defined quantum dot within a MoS$_2$ monolayer in which we confine a single electron. By applying control voltages to the device gates we modulate the confinement potential and force intervalley transitions. The present Rashba spin-orbit coupling additionally allows for spin operations. Moreover, both effects enable the spin-valley SWAP. The device structure is modeled realistically, taking into account feasible dot-forming potential and electric field that controls the Rasha coupling. Therefore, by performing reliable numerical simulations, we show how by electrically controlling the state of the electron in the device, we can obtain single- and two-qubit (thus universal) gates in a spin-valley two-qubit system. Through simulations we investigate possibility of implementation of two qubits \textit{locally}, based on single electron, with an intriguing feature that two-qubit gates are easier to realize than single ones.