# Enhancing electrical conductivity of room temperature deposited Sn-doped In$_2$O$_3$ thin films by hematite seed layers

## TL;DR

This study demonstrates that hematite seed layers significantly improve the electrical conductivity of room temperature deposited Sn-doped In₂O₃ thin films by enhancing crystallization, achieving conductivities up to 3300 S/cm.

## Contribution

The paper introduces a novel use of hematite seed layers to enhance the crystallization and conductivity of Sn-doped In₂O₃ thin films at room temperature.

## Key findings

- Hematite seed layers increase film conductivity.
- Conductivity reaches up to 3300 S/cm.
- Crystallization in the rhombohedral phase is promoted.

## Abstract

Hematite Fe$_2$O$_3$ seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide (ITO) thin films by room temperature magnetron sputtering. Conductivities of up to $\sigma = 3300\,{\rm S/cm}$ are observed. The improved conductivity is not restricted to the interface but related to an enhanced crystallization of the films, which proceeds in the rhombohedral phase.