Normal dispersion silicon oxynitride microresonator Kerr frequency combs

TL;DR

This paper demonstrates environmentally-stable Kerr frequency combs using silicon oxynitride microresonators with high Q factors and normal dispersion, enabling low-power operation and long-term stability without complex packaging.

Contribution

The authors present the first on-chip silicon oxynitride microresonator frequency combs with high Q, normal dispersion, and environmental stability, overcoming limitations of silica devices.

Findings

Achieved sub-microwatt threshold parametric oscillations.

Generated frequency combs via avoided mode crossing.

Maintained device performance over a week without special packaging.

Abstract

On-chip optical resonators have proven to be a promising platform for generating Kerr frequency combs. Whispering gallery mode resonators are particularly attractive because of their small footprint as well as low threshold and power consumption. This performance can be attributed to two characteristics: the cavity quality factor (Q) and the cavity dispersion. The input optical field into the cavity is amplified by the cavity Q, enabling nonlinear processes to occur with low input powers. In addition, the total span of the optical comb is governed by the dispersion. In an optical cavity-based comb, the dispersion is governed by the geometric dispersion of the cavity and the material dispersion. While many different materials have been explored, the realization of ultra-high Q (UHQ) on-chip frequency combs sources is still challenging for most materials. One exception is the family of integrated silica devices. However, because the silica attracts water molecules from the ambient environment, the lifetime of the device performance is fundamentally limited, unless packaged in a controlled atmosphere. Here, we demonstrate the generation of environmentally-stable frequency combs fabricated from SiO1.7N0.13 microtoroidal resonators. Due to the UHQ factors of the cavities, parametric oscillations with sub-microwatt thresholds are demonstrated. Based on their geometry and material properties, the cavities have normal dispersion. However, due to avoided mode crossing, frequency combs are generated. Finally, unlike SiO2, the SiO1.7N0.13 inhibits the formation of a water monolayer, allowing sub-microwatt performance to be maintained for over a week in devices stored with minimal environmental controls.