# Spin-orbit torque induced electrical switching of antiferromagnetic MnN

## TL;DR

This paper demonstrates electrical switching of an antiferromagnetic material MnN using spin-orbit torque in a Ta/MnN/Pt trilayer, analyzing how various factors influence the switching behavior, with results aligning with thermal activation models.

## Contribution

It presents the first experimental demonstration of spin-orbit torque induced switching in polycrystalline MnN, expanding the understanding of antiferromagnetic switching mechanisms.

## Key findings

- Switching amplitude depends on MnN thickness and current density.
- Switching behavior aligns with thermal activation models.
- Comparable to previous results on CuMnAs and Mn2Au.

## Abstract

Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching of a polycrystalline, metallic antiferromagnet with low anisotropy and high N\'eel temperature. We demonstrate the switching in a Ta / MnN / Pt trilayer system, deposited by (reactive) magnetron sputtering. The dependence of switching amplitude, efficiency, and relaxation are studied with respect to the MnN film thickness, sample temperature, and current density. Our findings are consistent with a thermal activation model and resemble to a large extent previous measurements on CuMnAs and Mn$_2$Au, which exhibit similar switching characteristics due to an intrinsic spin-orbit torque.