# Probing defect states in few-layer MoS$_{2}$ by conductance fluctuation spectroscopy

## TL;DR

This study uses conductance fluctuation spectroscopy to investigate defect states in few-layer MoS₂, revealing low noise levels and defect dynamics, and demonstrating a stable device architecture for long-term measurements.

## Contribution

It introduces a stable device architecture with high-k dielectric to study defect states in MoS₂ via conductance fluctuations, enabling reproducible long-term measurements and quantitative defect analysis.

## Key findings

- Significantly reduced conductance fluctuations compared to previous reports.
- Detection of generation-recombination noise from charge fluctuations at sulfur-vacancy levels.
- Establishment of conductance fluctuation spectroscopy as a tool for probing in-gap defect states.

## Abstract

Despite the concerted effort of several research groups, a detailed experimental account of defect dynamics in high-quality single- and few-layer transition metal dichalcogenides remain elusive. In this paper we report an experimental study of the temperature dependence of conductance and conductance-fluctuations on several few-layer MoS$_{2}$ exfoliated on hexagonal boron nitride and covered by a capping layer of high-$\kappa$ dielectric HfO$_{2}$. The presence of the high-$\kappa$ dielectric made the device extremely stable against environmental degradation as well as resistant to changes in device characteristics upon repeated thermal cycling enabling us to obtain reproducible data on the same device over a time-scale of more than one year. Our device architecture helped bring down the conductance fluctuations of the MoS$_2$ channel by orders of magnitude compared to previous reports. The extremely low noise levels in our devices made in possible to detect the generation-recombination noise arising from charge fluctuation between the sulphur-vacancy levels in the band gap and energy-levels at the conductance band-edge. Our work establishes conduction fluctuation spectroscopy as a viable route to quantitatively probe in-gap defect levels in low-dimensional semiconductors.