Going beyond copper: wafer-scale synthesis of graphene on sapphire

TL;DR

This paper presents a novel, metal-free chemical vapor deposition method for growing high-quality monolayer graphene directly on sapphire wafers, scalable to industrial sizes with low contamination levels.

Contribution

It introduces a new wafer-scale, metal-free CVD process for epitaxial graphene on sapphire, suitable for industrial applications.

Findings

High-quality graphene with mobilities >2000 cm2/Vs

Scalable to 4-inch and 6-inch wafers

Metal contamination within industry standards

Abstract

The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over wafer-scale sizes and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, we demonstrate a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapour deposition (CVD). We identify via low energy electron diffraction (LEED), low energy electron microscopy (LEEM) and scanning tunneling microscopy (STM) measurements the Al-rich reconstruction root31R9 of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm2/Vs. We scale up the process to 4-inch and 6-inch wafer sizes and demonstrate that metal contamination levels are within the limits for back-end-of-line (BEOL) integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis.