The occupied electronic structure of ultrathin boron doped diamond

TL;DR

This study compares the electronic structures of ultrathin and bulk boron-doped diamond, revealing minimal differences and suggesting nanoscale structures retain classical properties despite reduced dimensions.

Contribution

It provides the first direct comparison of electronic band structures between ultrathin and bulk boron-doped diamond using angle-resolved photoelectron spectroscopy.

Findings

No significant difference in electronic structure except for effective mass change

Ultrathin doped diamond retains classical electronic properties

Quantum confinement effects are not prominent at 1.8 nm thickness

Abstract

Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) {\delta}-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 {\mu}m). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.