# Strain-engineering of Berry curvature dipole and valley magnetization in monolayer MoS$_2$

## TL;DR

This paper demonstrates how strain can be used to control the Berry curvature dipole in monolayer MoS2, leading to tunable valley orbital magnetization, with both theoretical and experimental validation.

## Contribution

It introduces a combined theoretical and experimental approach to modulate and verify Berry curvature dipole-induced magnetization in monolayer MoS2 using strain.

## Key findings

- Valley orbital magnetization is generated by Berry curvature dipole under strain.
- Measured magnetization aligns with theoretical Berry curvature dipole calculations.
- Strain magnitude and direction effectively control the Berry curvature dipole.

## Abstract

The Berry curvature dipole is a physical quantity that is expected to allow various quantum geometrical phenomena in a range of solid-state systems. Monolayer transition metal dichalcogenides provide an exceptional platform to modulate and investigate the Berry curvature dipole through strain. Here we theoretically demonstrate and experimentally verify for monolayer MoS$_\rm{2}$ the generation of valley orbital magnetization as a response to an in-plane electric field due to the Berry curvature dipole. The measured valley orbital magnetization shows excellent agreement with the calculated Berry curvature dipole which can be controlled by the magnitude and direction of strain. Our results show that the Berry curvature dipole acts as an effective magnetic field in current-carrying systems, providing a novel route to generate magnetization.