# Electron traversal times in disordered graphene nanoribbons

## TL;DR

This paper investigates how disorder and orientation affect electron traversal times in graphene nanoribbon (GNR) molecular junctions using a time-dependent formalism, informing the design of GNR-based electronic devices.

## Contribution

It introduces a method to analyze electron traversal times in disordered GNRs and links these signatures to device operational frequencies.

## Key findings

- Traversal times vary with disorder and orientation.
- Electron traversal signatures can inform device design.
- Results relate traversal times to operational frequencies.

## Abstract

Using the partition-free time-dependent Landauer-B{\"u}ttiker formalism for transient current correlations, we study the traversal times taken for electrons to cross graphene nanoribbon (GNR) molecular junctions. We demonstrate electron traversal signatures that vary with disorder and orientation of the GNR. These findings can be related to operational frequencies of GNR-based devices and their consequent rational design.