Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque

TL;DR

This paper presents a low-voltage, electric field-controlled spin logic device using spin-orbit torque on ferroelectric/ferromagnet structures, enabling deterministic magnetization switching without external magnetic fields.

Contribution

It introduces a scalable, low-voltage spin logic device controlled by electric fields, demonstrating multiple logic functions with nonvolatile magnetization states.

Findings

Operates without external magnetic field using voltages as low as 10 V

Successfully demonstrates logic functions like XNOR, AND, NAND, NOT

Achieves deterministic switching from the virgin ferroelectric state

Abstract

We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet / heavy metal structures on a ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT) substrate using current-induced spin-orbit torque. The devices were operated without an external magnetic field and controlled by voltages as low as 10 V applied across the PMN-PT substrate, which is much lower compared to previous reports (500 V). The deterministic switching with smaller voltage was realized from the virgin state of the PMN-PT. Ferroelectric simulation shows the unsaturated minor loop exhibits obvious asymmetries in the polarizations. Larger polarization can be induced from the initial ferroelectric state, while it is difficult for opposite polarization. The XNOR, AND, NAND and NOT logic functions were demonstrated by the deterministic magnetization switching from the interaction between the spin-orbit torque and electric field at the PMN-PT/Pt interface. The nonvolatile spin logic scheme in this work is simple, scalable, programmable, which are favorable in the logic-in-memory design with low energy consumption.