# Electronic Structure of Graphene with two Strains and Double Barrier

## TL;DR

This paper investigates how strain affects the electronic properties of graphene with double barriers, revealing strain-induced phenomena like fermion beam collimation, surface states, and confinement, with detailed transmission and conductance analysis.

## Contribution

It demonstrates that strain can be used to control electronic transport and surface states in graphene with double barriers, providing new insights into strain engineering.

## Key findings

- Strain induces fermion beam collimation in graphene.
- Surface states and confinement are tunable via strain.
- Transmission probability and conductance depend on strain configurations.

## Abstract

We study the electronic structure of Dirac fermions scattered by double barrier potential in graphene under strain effect. We show that traction and compression strains can be used to generate fermion beam collimation, 1D channels, surface states and confinement. The corresponding transmission probability and conductance at zero temperature are calculated and their numerical implementations taking into account different configurations of physical parameters enabled us to analyze some features of the system.