# Studies on small charge packet transport in high-resistivity fully-depleted CCDs

## TL;DR

This paper presents a physical model and measurement techniques for small charge packet transport in high-resistivity CCDs, including a new method to measure lateral charge spread and validation with experimental data.

## Contribution

Introduces a novel measurement technique and extends existing models to better understand charge transport in thick high-resistivity CCDs.

## Key findings

- Validated the new measurement technique with real CCD data
- Extended charge transport modeling beyond diffusion effects
- Provided insights into charge behavior in thick CCDs

## Abstract

In this work, we will present a physical model and measurements of the transport of small charge packets in the bulk of thick high resistivity CCD before being collected by the pixel potential wells. A new technique to measure the lateral spread of the charge as a function of the ionization depth in the bulk is presented. Results from measurements on CCD currently in use for several scientific instruments are shown and validated with a new mathematical algorithm to extend the current modeling based only on the diffusion of the charge in silicon.