Mechanisms behind slow photo-response character of Pulsed Electron Deposited ZnO thin films
Mehmet Ozdogan, Gokhan Utlu, and Cem Celebi

TL;DR
This study investigates the slow photo-response of pulsed electron deposited ZnO thin films, revealing that surface adsorption/desorption of water and oxygen primarily causes response delays, even in high vacuum conditions.
Contribution
The paper clarifies the dominant physical mechanism behind slow photo-response in ZnO thin films, emphasizing the role of surface adsorption/desorption over defect states.
Findings
Adsorption/desorption of water and oxygen dominates the photo-response delay.
Encapsulation with SiO2 reduces adsorption effects and improves response time.
Surface effects persist even under high vacuum conditions.
Abstract
Zinc Oxide (ZnO) semiconductor is ideal candidates for ultra-violet (UV) photodetector due to its promising optoelectronic properties. Photodetectors based on ZnO nanostructures show very high photoconductivity under UV light, but they are plagued by slow photo-response time as slow as several tens of hours, even more. Most of the studies claimed that atmospheric adsorbates such as water and oxygen create charge traps states on the surface and remarkably increase both the photoconductivity and response time, but there are also limited studies that claiming the defect induced states acting as hole trap centers responsible for these problems. However, the underlying physical mechanism is still unclear. Here we study the effects of both adsorbates and defect-related states on the photo-response character of Pulsed Electron Deposited ZnO thin films. In order to distinguish between these two…
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