# Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate

## TL;DR

This paper introduces a rapid charge sensing method for Si/SiGe quantum dots using a high-frequency accumulation gate, enabling fast, high-fidelity qubit readout compatible with resistive 2DEGs.

## Contribution

It presents a novel high-frequency charge sensing technique that overcomes limitations of reflectometry in resistive 2DEGs, allowing fast and high-resolution qubit measurements.

## Key findings

- Achieved charge stability diagrams at high speed in Si/SiGe quantum dots.
- Demonstrated pulsed-gate single-shot charge and spin readout with 2.4 μs integration.
- Enabled compatibility with resistive 2DEGs for quantum dot readout.

## Abstract

Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double- and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for undoped silicon devices, reflectometry off sensor ohmics suffers from the finite resistivity of the two-dimensional electron gas (2DEG), and alternative readout methods are limited to measuring qubit capacitance, rather than qubit charge. By coupling a surface-mount resonant circuit to the plunger gate of a high-impedance sensor, we realized a fast charge sensing technique that is compatible with resistive 2DEGs. We demonstrate this by acquiring at high speed charge stability diagrams of double- and triple-dot arrays in Si/SiGe heterostructures as well as pulsed-gate single-shot charge and spin readout with integration times as low as 2.4 $\mu$s.