Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices

TL;DR

This paper develops theoretical relations to understand how interface traps and doping atoms influence the conductivity of graphene field effect devices, highlighting the sensitivity of doping efficiency to device parameters.

Contribution

It provides analytical formulas for calculating chemical doping effects in graphene devices, addressing the impact of interface traps and impurities.

Findings

Analytical relations for doping effects derived

Doping efficiency varies with device parameters

Insights into interface trap influence on conductivity

Abstract

Near-interfacial oxide traps and chemical impurities on the graphene surface or at the graphene-dielectric interface can be a source of intentional or unintentional doping of graphene sheet. The efficiency of such chemical doping can vary in a wide range depending on parameters of graphene field effect devices. Mechanisms of such sensitivity of doping efficiency to the device characteristics need to be understood. The objective of this paper is to theoretically derive the analytical relations, adapted to the explicit calculation of graphene chemical doping.