InMRAM: Introductory course on Magnetic Random Access Memories for microelectronics students and engIneers
Gregory Di Pendina, Guillaume Prenat (SPINTEC), Bernard Dieny, (SPINTEC)

TL;DR
This paper introduces InMRAM, an educational course designed to bridge the knowledge gap between microelectronics engineers and magnetism/spintronics, fostering interdisciplinary understanding and collaboration.
Contribution
It presents the development and implementation of an introductory course on MRAM for microelectronics students and engineers with limited magnetism background.
Findings
Successful organization of the second InMRAM course in Grenoble.
Enhanced interdisciplinary knowledge among participants.
Promotion of collaboration between magnetism and microelectronics communities.
Abstract
Magnetic Random Access Memories (MRAM) interest is growing fast in the microelectronics industry. Commercial MRAM products already exist and all major industrial players have launched large R\&D efforts to bring Spin Transfer Torque MRAM to production. The principle goal is to replace part of the memory hierarchy (in particular DRAM) by MRAM below the 20nm node. Interest in bringing non-volatile elements closer to the logic is also growing, in order to improve the performance of electronic circuits by increasing the bandwidth between logic and memory and reducing the power consumption. Despite this nsmg interest, very few microelectronics engineers have a background in magnetism and even more in spinelectronics so that it is very difficult for them to get into this emerging field. Magnetism and microelectronics communities have worked separately so far. We are convinced it is time to…
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