# MoS2 Field Effect Transistors based sensors for low concentration acetone detection

## TL;DR

This paper demonstrates a MoS2-based FET sensor functionalized with PMMA capable of detecting acetone at concentrations as low as 0.4 ppm at room temperature, offering a rapid, low-cost alternative for diabetes screening through breath analysis.

## Contribution

The study introduces a novel MoS2 FET sensor with PMMA functionalization for sub-ppm acetone detection at room temperature, advancing solid state gas sensing technology.

## Key findings

- Achieved detection limit of 0.4 ppm for acetone.
- First sub-ppm room temperature detection using a solid state device.
- Demonstrated electrostatic gating effect due to acetone binding.

## Abstract

The measurement of acetone in human breath, a known biomarker for diabetes, can act as an effective screening method for diabetes. While gas chromatography and mass spectroscopy based methods can detect gases in low concentration, they are costly, bulky, need complex sample preparation and are slow. Solid state devices such as Field Effect Transistors (FETs) can perform this faster and at a lower cost. In this work, we present the results of acetone gas sensing by molybdenum disulfide (MoS2) based FETs. MoS2 channel was functionalized with polymethyl methacrylate (PMMA). When acetone molecules bind to PMMA, an electrostatic gating effect takes place and changes the electrical characteristics of the FET. More the number of acetone molecules that bind to the PMMA layer, the higher the shift in the drain current-voltage (Id-Vg) curve of the FET. This shift is modeled as a change in the threshold voltage of the FET. The Id-Vg curve was observed to shift downwards, as the acetone concentration increases. The limit of detection was observed to be 0.4 parts per million (ppm). This is the first sub-ppm concentration acetone detection at room temperature using a solid state device.