Characterization of Surface and Structure of in-situ Doped Sol-Gel-Derived Silicon Carbide

TL;DR

This study characterizes in-situ doped sol-gel-derived silicon carbide, revealing how nitrogen and aluminum dopants influence polytype formation, surface chemistry, and passivation, enabling one-pot synthesis for advanced applications.

Contribution

It demonstrates a novel sol-gel based method for doping and passivating SiC in a single step, controlling surface and structural properties for high-performance applications.

Findings

Nitrogen doping results in cubic SiC with native oxide surface.

Aluminum doping promotes hexagonal polytypes and self-passivation.

Passivation achieved through aluminum carbonate formation in one step.

Abstract

Silicon carbide (SiC), is an artificial semiconductor used for high-power transistors and blue LEDs, for its extraordinary properties. SiC would be attractive for more applications, but large-scale or large-surface area fabrication, with control over defects and surface is challenging. Sol-gel based techniques are an affordable alternative towards such requirements. This report describes two types of microcrystalline SiC derived after carbothermal reduction from sol-gel-based precursors, one with nitrogen added, the other aluminum. Characterization of their bulk, structure and surface shows that incorporation of dopants affects the formation of polytypes and surface chemistry. Nitrogen leads exclusively to cubic SiC, exhibiting a native oxide surface. Presence of aluminum instead promotes growth of hexagonal polytypes and induces self-passivation of the crystallites surface during growth. This is established by hydrogenation of silicon bonds and formation of a protecting aluminum carbonate species. XPS provides support for the suggested mechanism. This passivation is achieved in only one step, solely by aluminium in the precursor. Hence, it is shown that growth, doping and passivation of SiC can be performed as one-pot synthesis. Material without insulating oxide and a limited number of defects is highly valuable for applications involving surface-sensitive charge-transfer reactions, therefore the potential of this method is significant.