# Voltage-controlled skyrmion-based artificial synapse in a synthetic antiferromagnet

## TL;DR

This paper introduces a low-energy spintronic memristor using synthetic antiferromagnets and skyrmions, enabling neuromorphic computing with high efficiency and tunable synaptic weights.

## Contribution

It proposes a novel ultralow-dissipation spintronic synapse based on skyrmion manipulation in a synthetic antiferromagnet with electric field control.

## Key findings

- Achieved resistance variation through skyrmion size control
- Demonstrated ultralow energy consumption of 0.3 fJ per operation
- Paved the way for ultralow power neuromorphic computing

## Abstract

Spintronics exhibits significant potential in neuromorphic computing system with high speed, high integration density, and low dissipation. In this letter, we propose an ultralow-dissipation spintronic memristor composed of a synthetic antiferromagnet (SAF) and a piezoelectric substrate. Skyrmions/skyrmion bubbles can be generated in the upper layer of SAF with weak anisotropy energy (Ea). With a weak electric field on the heterostructure, the interlayer antiferromagnetic coupling can be manipulated, giving rise to a continuous transition between a large skyrmion bubble and a small skyrmion. This thus induces the variation of the resistance of a magnetic tunneling junction. The synapse based on this principle may manipulate the weight in a wide range at a cost of a very low energy consumption of 0.3 fJ. These results pave a way to ultralow power neuromorphic computing applications.

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Source: https://tomesphere.com/paper/1906.09758