Observation of charge density wave transition in TaSe3 mesowires
J. Yang, Y. Q. Wang, R. R. Zhang, L. Ma, W. Liu, Z. Qu, L. Zhang, S., L. Zhang, W. Tong, L. Pi, W. K. Zhu, C. J. Zhang

TL;DR
This study reports the first observation of a charge density wave transition in TaSe3 mesowires at 65 K, highlighting the influence of reduced dimensionality on CDW phenomena in quasi-1D materials.
Contribution
The paper demonstrates the synthesis of TaSe3 mesowires and provides experimental evidence of CDW transition in these nanostructures, which was not observed in bulk form before.
Findings
CDW transition at 65 K in TaSe3 mesowires
Carrier type changes from n-type to p-type below 50 K
Enhanced CDW effects due to reduced dimensionality
Abstract
The quasi-one-dimensional (quasi-1D) TaSe3 attracts considerable attention for its intriguing superconductivity and possible interplay with nontrivial topology and charge density wave (CDW) state. However, unlike the isostructural analogues, CDW has not been observed for TaSe3 despite its quasi-1D character that is supposed to promote Peierls instabilities and CDW. Here we synthesize TaSe3 mesowires (MWs) using a one-step approach. For the MW of ~300 nm thick, a distinct CDW transition occurs at 65 K in the resistivity measurement, which has not been reported before and is further evidenced by the Raman characterization and susceptibility measurement. For comparison, we have also prepared bulk single crystal TaSe3. Although no anomaly appears in the resistivity and magnetoresistance measurements, the carrier type detected by Hall effect varies from n-type to p-type below 50 K,…
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