Si-incorporated amorphous indium oxide thin-film transistors

TL;DR

This paper reviews the effects of silicon doping in amorphous indium oxide thin-film transistors, highlighting improved stability, reduced trap density, and the development of a high-mobility bilayer TFT with stable operation.

Contribution

It provides a comprehensive analysis of Si incorporation effects on InOx TFTs and introduces a novel bilayer TFT with enhanced stability and mobility.

Findings

Reduced trap density at high Si doping levels.

Stable operation under bias stress achieved.

Observation of inverse Meyer-Neldel rule indicating ohmic contact.

Abstract

Amorphous oxide semiconductors, especially indium oxide-based (InOx) thin-films, have been major candidates for high mobility with easy-to-use device processability. As one of the dopants in InOx semiconductors, we proposed Si to design a thin-film transistor (TFT) channel. Because the suppression of unstable oxygen vacancies in InOx is crucial to maintaining the semiconducting behavior, Si was selected as a strong oxygen binder that is reasonably available for large production. In this review, we focus on the overall properties observed in Si-incorporated amorphous InOx TFTs in terms of bond-dissociation energy, Gibbs free energy, Si-concentration dependence of TFT properties, carrier transport mechanism, and bias stress instability. In comparing low and high doping densities, we found that the activation energy and density of states decreased at a high Si concentration in InOx TFTs, implying that the trap density was reduced. As a result, stable operation under bias stresses could be realized. Furthermore, the inverse Meyer-Neldel rule was observed in the highly Si-doped InOx TFT, indicating reasonable ohmic contact. Based on our fundamental knowledge of the Si-doped InOx film, we developed a high-mobility bilayer TFT with a homogeneous stacked channel that was different from a TFT with an etch stop layer structure. The TFT showed remarkably stable operation. With simple element components based on InOx, it is possible to systematically discuss vacancy engineering in terms of conduction properties.