Long Term Logarithmic Annealing in p-MNOS RADFETs and Renormalization of Relaxation Parameters
G. I. Zebrev, P. A. Zimin, E. V. Mrozovskaya, V. A. Yushkova, V. S., Anashin, P. A. Chubunov
TL;DR
This paper demonstrates that the fading of pMNOS-based dosimeters follows a near-logarithmic pattern over time, both during and after irradiation, aligning with a previously proposed theoretical model.
Contribution
It provides experimental validation of the logarithmic annealing behavior in pMNOS RADFETs and refines the understanding of relaxation parameters.
Findings
Fading follows a near-logarithmic temporal dependence.
Results are consistent with the existing relaxation model.
Enhances understanding of long-term behavior of pMNOS dosimeters.
Abstract
It was experimentally shown that annealing (fading) of the pMNOS based dosimeters has close to logarithmic temporal dependence during and after irradiation. The results are shown to be consistent with the previously proposed model.
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Taxonomy
TopicsRadiation Effects in Electronics · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design