A Two Dimensional Tunneling Resistance Transmission Line Model for Nanoscale Parallel Electrical Contacts
Sneha Banerjee, John Luginsland, and Peng Zhang

TL;DR
This paper introduces a self-consistent two-dimensional tunneling resistance transmission line model for nanoscale parallel electrical contacts, improving accuracy over 1D models especially at small tunneling layers or high voltages.
Contribution
It presents a novel 2D model that accurately characterizes current distribution and contact resistance in nanoscale tunneling contacts, surpassing traditional 1D models in certain regimes.
Findings
The model accurately predicts voltage-dependent potential barrier variation.
It shows 1D models are less reliable at small tunneling layers or high voltages.
Provides design insights for nanoscale electrical contacts.
Abstract
Contact resistance and current crowding are important to nanoscale electrical contacts. In this paper, we present a self-consistent model to characterize partially overlapped parallel contacts with varying specific contact resistivity along the contact length. For parallel tunneling contacts formed between contacting members separated by a thin insulating gap, we examine the local voltage-dependent variation of potential barrier height and tunneling current along the contact length, by solving the lumped circuit transmission line model (TLM) equations coupled with the tunneling current self consistently. The current and voltage distribution along the parallel tunneling contacts and their overall contact resistance are analyzed in detail, for various input voltage, electrical contact dimension, and material properties (i.e. work function, sheet resistance of the contact members, and…
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