# Enhanced light-matter interaction in an atomically thin semiconductor coupled with dielectric nano-antennas

## TL;DR

This paper demonstrates significant enhancement of light-matter interactions in atomically thin WSe₂ using dielectric gallium phosphide nano-antennas, enabling improved emission, excitation, and scattering properties for 2D semiconductors.

## Contribution

It introduces low-loss GaP nano-antennas with small mode volumes coupled to 2D WSe₂, achieving unprecedented photoluminescence and Raman signal enhancements.

## Key findings

- Photoluminescence enhancement exceeding 10^4
- Raman scattering signal enhancement over 10^3
- Modification of emission directionality and polarization

## Abstract

Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities with optical modes volumes close to or below the diffraction limit. Recently, it has become possible to make all-dielectric nano-cavities with reduced mode volumes and negligible non-radiative losses. Here, we realise low-loss high-refractive-index dielectric gallium phosphide (GaP) nano-antennas with small mode volumes coupled to atomic mono- and bilayers of WSe$_2$. We observe a photoluminescence enhancement exceeding 10$^4$ compared with WSe$_2$ placed on planar GaP, and trace its origin to a combination of enhancement of the spontaneous emission rate, favourable modification of the photoluminescence directionality and enhanced optical excitation efficiency. A further effect of the coupling is observed in the photoluminescence polarisation dependence and in the Raman scattering signal enhancement exceeding 10$^3$. Our findings reveal dielectric nano-antennas as a promising platform for engineering light-matter coupling in two-dimensional semiconductors.