Electrical and optical control of single spins integrated in scalable semiconductor devices

TL;DR

This paper demonstrates electrical and optical methods to control single spins in silicon carbide, achieving charge state manipulation, Stark tuning, and linewidth narrowing to improve quantum emitter stability.

Contribution

It introduces a scalable semiconductor device platform integrating coherent spin defects with electrical control, reducing spectral diffusion in solid-state quantum emitters.

Findings

Achieved over 850 GHz Stark shift tuning.

Narrowed optical linewidths by over 50 fold.

Enabled deterministic charge state control of single spins.

Abstract

Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricate diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge state control and broad Stark shift tuning exceeding 850 GHz. Surprisingly, we show that charge depletion results in a narrowing of the optical linewidths by over 50 fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while utilizing classical semiconductor devices to control scalable spin-based quantum systems.