# Phonon scattering induced carrier resistivity in twisted double bilayer graphene

## TL;DR

This paper presents a theoretical analysis of how phonon scattering affects electrical resistivity in twisted double bilayer graphene, highlighting the impact of small twist angles on effective mass and resistivity, with implications for superconductivity.

## Contribution

It introduces a theoretical model linking phonon-induced resistivity to twist angle and effective mass in TDBG, and estimates superconducting transition temperatures.

## Key findings

- Resistivity increases linearly with temperature at small twist angles.
- Effective mass is significantly enhanced at small twist angles.
- Implications for superconductivity in TDBG are discussed.

## Abstract

In this work we carry out a theoretical study of the phonon-induced resistivity in twisted double bilayer graphene (TDBG), in which two Bernal-stacked bilayer graphene devices are rotated relative to each other by a small angle $\theta$. We show that at small twist angles ($\theta\sim 1^\circ$) the effective mass of the TDBG system is greatly enhanced, leading to a drastically increased phonon-induced resistivity in the high-temperature limit where phonon scattering leads to a linearly increasing resistivity with increasing temperature. We also discuss possible implications of our theory on superconductivity in such a system, and provide an order of magnitude estimation of the superconducting transition temperature.