# The Poole-Frenkel laws and a pathway to multi-valued memory

**Authors:** Maria Patmiou, D. Niraula, V. G. Karpov

arXiv: 1906.07677 · 2020-01-29

## TL;DR

This paper revisits Poole-Frenkel conduction in non-volatile memory materials, explaining it via percolation theory and proposing a pathway to multi-valued memory and neural network applications.

## Contribution

It introduces a percolation-based explanation for Poole-Frenkel conduction and suggests a new approach for multi-valued non-volatile memory devices.

## Key findings

- Percolation theory explains Poole-Frenkel dependencies.
- Bias modifies microscopic resistances in percolation pathways.
- Pathway to multi-valued memory and neural network applications.

## Abstract

We revisit the mechanism of Poole-Frenkel non-ohmic conduction in materials of non-volatile memory. Percolation theory is shown to explain both the Poole and Frenkel dependencies corresponding to the cases of respectively small and large samples compared to the correlation radii of their percolation clusters. The applied bias modifies a limited number of microscopic resistances forming the percolation pathways. That understanding opens a pathway to multi-valued non-volatile memory and related neural network applications.

## Full text

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## Figures

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## References

23 references — full list in the complete paper: https://tomesphere.com/paper/1906.07677/full.md

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Source: https://tomesphere.com/paper/1906.07677