# Muon probes of temperature-dependent charge carrier kinetics in semiconductors

## TL;DR

This paper introduces a novel photo-muSR technique to analyze temperature-dependent charge carrier kinetics in semiconductors, providing insights into recombination and diffusion mechanisms in germanium.

## Contribution

It develops a new method using photo-muSR to characterize excess carrier kinetics and extract key parameters like lifetime and mobility in semiconductors.

## Key findings

- Carrier lifetime spectrum modeled with diffusion equation
- Temperature dependence reveals recombination mechanisms
- Muon spin relaxation correlates with carrier density

## Abstract

We have applied the photoexcited muon spin spectroscopy technique (photo-$\mu$SR) to intrinsic germanium with the goal of developing a new method for characterizing excess carrier kinetics in a wide range of semiconductors. Muon spin relaxation rates can be a unique measure of excess carrier density and utilized to investigate carrier dynamics. The obtained carrier lifetime spectrum can be modeled with a simple diffusion equation to determine bulk recombination lifetime and carrier mobility. Temperature dependent studies of these parameters can reveal the recombination and diffusion mechanism.