Deep levels analysis in wavelength extended InGaAsBi photodetector

TL;DR

This study investigates defect levels in InGaAsBi photodetectors using LFNS and photoluminescence, revealing three deep defect levels that impact device performance in infrared detection.

Contribution

It provides a detailed analysis of defect levels in InGaAsBi photodetectors, aiding understanding of dark current limitations in these materials.

Findings

Identified three deep defect levels at Ec -0.33 eV, Ev +0.14 eV, and Ec -0.51 eV.

LFNS and photoluminescence spectra are consistent in defect level detection.

Deep defect levels are linked to dark current in InGaAsBi photodetectors.

Abstract

InP based dilute Bismide InGaAsBi material is emerging as a promising candidate for extending short wavelength infrared detection. One critical factor to limit the performance of these InGaAsBi photodiodes is dark current caused by defects within the material. In this work, low frequency noise spectroscopy (LFNS) and temperature varied photoluminescence was used to characterize the defect levels in the devices. Three deep levels located at Ec -0.33 eV, Ev +0.14 eV, and Ec -0.51 eV were identified from the LFNS spectra, which are consistent with emission peak energy found by photoluminescence spectra of InGaAsBi.