InGaAsP/InP uni-travelling-carrier photodiode at 1064nm wavelength
Zhiyang Xie, Yaojiang Chen, Ningtao Zhang, Baile Chen
TL;DR
This paper demonstrates high-speed InGaAsP/InP uni-traveling-carrier photodiodes at 1064nm with a 17.8 GHz bandwidth, high RF power output, low dark current, and a developed analytical model for performance analysis.
Contribution
It introduces a novel InGaAsP/InP structure for 1064nm photodiodes with detailed performance metrics and an analytical model for bandwidth limitations.
Findings
Bandwidth of 17.8 GHz at -5 V bias
RF output power of 19.5 dBm at 13 GHz
Dark current density of 10 nA/cm²
Abstract
High-speed back-illuminated uni-traveling-carrier photodiodes at 1064nm were demonstrated grown on InP with 3dB bandwidth of 17.8 GHz at -5 V bias, using InGaAsP as absorption layer. PDs with 40um diameter deliver RF output power levels as high as 19.5 dBm at 13 GHz. This structure can achieve low dark current density of 10 nA per cm2 at -5V bias and quantum efficiency of 45.2% at 1064nm. An analytical model based on S-parameter fitting was built to extract parameter to access the bandwidth limiting factors.
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