Sub-single exciton optical gain threshold in colloidal semiconductor quantum wells with gradient alloy shelling
Nima Taghipour, Savas Delikanli, Sushant Shendre, Mustafa Sak, Mingjie, Li, Furkan Isik, Ibrahim Tanriover, Burak Guzelturk, Tze Chien Sum, Hilmi, Volkan Demir

TL;DR
This paper reports the achievement of sub-single exciton optical gain in specially engineered colloidal quantum wells, enabling low-threshold, long-lived optical amplification and a step towards solution-processable colloidal lasers.
Contribution
The study introduces gradient alloy shell engineering in colloidal quantum wells to achieve sub-single exciton optical gain thresholds, reducing Auger recombination effects.
Findings
Achieved sub-single exciton optical gain threshold of Ng=0.80.
Observed amplified spontaneous emission at low pump fluence of 800 nJ/cm².
Demonstrated a colloidal laser with an ultralow lasing threshold of 7.5 μJ/cm².
Abstract
Colloidal semiconductor quantum wells have emerged as a promising material platform for use in solution-processable light-generation including colloidal lasers. However, application relying on their optical gain suffer from a fundamental complication due to multi-excitonic nature of light amplification in common II-VI semiconductor nanocrystals. This undesirably increases the optical gain threshold and shortens the net gain lifetime because of fast nonradiative Auger decay. Here, we demonstrate sub-single exciton level of optical gain threshold in specially engineered CdSe/CdS@CdZnS core/crown@gradient alloyed shell colloidal quantum wells. This sub-single exciton ensemble-averaged gain threshold of Ng = 0.80 (per particle) resulting from impeded Auger recombination along with a large absorption cross-section of quantum wells enables us to observe the amplified spontaneous emission…
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