Determination of band offsets of Ga2O3/FTO heterojunction for current spreading for high temperature and UV applications

TL;DR

This study investigates the Ga2O3/FTO heterojunction, determining its band offsets and electrical behavior, demonstrating FTO's suitability as a current spreading layer in high-temperature, UV, and optoelectronic devices.

Contribution

It provides the first detailed analysis of the Ga2O3/FTO heterojunction's band offsets and electrical characteristics, highlighting FTO's potential for high-temperature and UV applications.

Findings

Band offsets of 0.11 eV (conduction) and 0.42 eV (valence) determined.

Heterojunction exhibits ohmic I-V behavior.

FTO is a promising current spreading material for Ga2O3 devices.

Abstract

Because of relatively low electron mobility of Ga2O3, it is important to identify proper current spreading materials. Fluorine-doped SnO2 (FTO) offers superior properties to those of indium tin oxide (ITO) including higher thermal stability, larger bandgap, and lower cost. However, the Ga2O3/FTO heterojunction including the important band offset and the I-V characteristics have not been reported. In this work, we have grown the Ga2O3/FTO heterojunction and performed X-ray photoelectron spectroscopy (XPS) measurement. The conduction and valence band offsets were determined to be 0.11 and 0.42 eV, indicating a minor barrier for electron transport and type-I characteristics. The subsequent I-V measurement of the Ga2O3/FTO heterojunction exhibited ohmic behavior. The results of this work manifests excellent candidacy of FTO for current spreading layers of Ga2O3 devices for high temperature and UV applications.