Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure
I.B. Dorosheva, A.S. Vokhmintsev, R.V. Kamalov, A.O. Gryaznov, I.A., Weinstein
TL;DR
This study investigates how the thickness of the oxide layer in Ti/TiO2-NT/Au memristors affects their resistive switching behavior, demonstrating potential for non-volatile memory applications.
Contribution
It provides experimental analysis of oxide layer thickness effects on resistive switching in Ti/TiO2-NT-based memristors, highlighting optimal thickness for memory use.
Findings
Oxide layer thickness of 160 nm shows promising switching characteristics.
High and low resistance states are characterized across different thicknesses.
Over 14,000 switching cycles demonstrate device stability.
Abstract
Self-ordered nanotubular titania TiO2-NT with outer tube diameter of 45 nm are synthesized using the anodic oxidation of titanium foil. Four sets of memristors with 100 diameter based on Ti/TiO2-NT/Au sandwich structures with an oxide layer thickness of 80, 120, 160 and 200 nm are fabricated. Current-voltage (CV) characteristics for the obtained samples in the static and dynamic operation modes are studied. Resistance in high and low resistance states is estimated. Basing on the analysis of the CV characteristics in dynamic mode (> 14 000 switchings) a prospective of use for synthesized Ti/TiO2-NT/Au micromemristors with oxide layer thickness of 160 nm in non-volatile memory is shown. Keywords: anodic titania, titanium dioxide nanotubes, nanotubular structure, memristor, resistive switching
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