Unidirectional Synapse-Like Behavior of Zr/ZrO2-NT/Au Layered Structure
A.S. Vokhmintsev, R.V. Kamalov, A.V. Kozhevina, I.A. Petrenyov, N.A., Martemyanov, I.A. Weinstein
TL;DR
This paper reports the fabrication and characterization of a Zr/ZrO2-NT/Au memristive structure, demonstrating unidirectional conductivity and high synaptic plasticity, relevant for neuromorphic applications.
Contribution
It introduces a novel Zr/ZrO2-NT/Au memristive device with unidirectional behavior and detailed electrical analysis, advancing memristor technology for neuromorphic systems.
Findings
Unidirectional electrical conductivity in the structure.
High resistive state electrical resistance estimates.
Demonstrated high synaptic plasticity.
Abstract
Zirconia nanotubular layer with an outer tube diameter 25 nm was synthesized by potentiostatic anodization. The Zr/ZrO2-NT/Au memristive structure is fabricated using stencil mask and magnetron sputtering techniques. Current-voltage characteristics are measured in full cycles of resistive switching with varying parameters of the applied harmonic voltage. An equivalent circuit with unidirectional electrical conductivity for the studied structure is proposed. Estimates of the electrical resistance of memristors in high-and intermediate resistivity states are performed. The high synaptic plasticity of memristors based on the Zr/ZrO2-NT/Au structure is shown.
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