Comparative Analysis of Switching Dynamics in Different Memristor Models

TL;DR

This paper compares the switching dynamics of three widely used memristor models, analyzing how their internal states change with input current or voltage to inform their use in computational memory applications.

Contribution

It provides a comparative analysis of three prominent memristor models, highlighting differences in internal state modulation mechanisms.

Findings

Strukov model exhibits linear internal state change

Yang model's linearity can be controlled

Pickett model shows non-linear internal state variation

Abstract

Memristor, memory resistor, is an emerging technology for computational memory. Number of different memristor models are available based on the physical experiments. To use memristor as a computational memory element, one should know how the internal state modulates in time when driven by current or voltage. In this paper, we examine three widely used models and make a comparison of how internal state in these models changes with respect to input current or voltage. In Strukov model, internal state changes linearly with the input current. However, the linearity of internal state modulation in Yang model can be controlled. On the other hand, Pickett model shows non linear variation in internal state with the input current.