# Performance Considerations of Thin Ferroelectrics (~10 nm HfO2, ~20 nm PZT) FDSOI NCFETs for Digital Circuits at Reduced Power Consumption

## TL;DR

This study uses simulations to evaluate thin ferroelectric FDSOI NCFETs, demonstrating significant power savings and improved performance over traditional FDSOI MOSFETs in high-frequency digital circuits.

## Contribution

It provides a comparative analysis of HfO2 and PZT ferroelectric materials in FDSOI NCFETs, highlighting their advantages for low-power high-performance digital circuits.

## Key findings

- HfO2 FDSOI NCFETs reduce power consumption by ~66% compared to baseline.
- PZT FDSOI NCFETs reduce power consumption by ~86% for similar performance.
- Power-delay product is ~24% lower with HfO2 and ~21% lower with PZT NCFETs.

## Abstract

The paper presents simulation study of thin ferroelectrics (Si doped HfO2, PZT) PGP FDSOI NCFETs at circuit level for high performance, low VDD low-power digital circuits. The baseline PGP FDSOI MOSFET has 20 nm metal gate length with supply voltage varying from 0.5 V to 0.9 V. The circuits studied were 3-stage CMOS ring oscillator, NAND-2 and NOR-2 gates at a frequency of 20 GHz. The paper shows that HfO2 FDSOI NCFET based NAND-2 gates can provide significant reduction in average power consumption, which was ~66% that of baseline FDSOI MOSFET based NAND-2 gates for comparable performance. For the same performance, the average power consumption for PZT FDSOI NCFET based NAND-2 gate was ~86% that of baseline FDSOI MOSFET based NAND-2 gate. The power-delay product of HfO2 FDSOI NCFET based gates was found to be ~24% lower than baseline FDSOI MOSFET based gates and that of PZT FDSOI NCFET based gates was found to be ~21% less than that of baseline FDSOI MOSFET based gates. The performance of HfO2 FDSOI NCFET based gates with increased fan-in and fan-out was also found to be superior to PZT FDSOI NCFET based gates and baseline FDSOI MOSFET based gates.