# Voltage-induced high-speed DW motion in a synthetic antiferromagnet

## TL;DR

This paper demonstrates that voltage-induced domain wall motion in a synthetic antiferromagnet can achieve high speeds due to strong interlayer coupling, overcoming limitations seen in single ferromagnetic layers.

## Contribution

The study introduces a high-speed voltage-induced domain wall motion mechanism in synthetic antiferromagnets, highlighting the role of interlayer exchange coupling in enhancing velocity.

## Key findings

- High DW velocity in SAF compared to single layers
- Interlayer antiferromagnetic exchange coupling inhibits tilting and Walker breakdown
- Voltage-induced magnetic anisotropy gradient acts as an effective driving field

## Abstract

Voltage-induced motion of a magnetic domain wall (DW) has potential in developing novel devices with ultralow dissipation. However, the speed for the voltage-induced DW motion (VIDWM) in a single ferromagnetic layer is usually very low. In this work, we proposed VIDWM with high speed in a synthetic antiferromaget (SAF). The velocity for the coupled DWs in the SAF is significantly higher than its counterpart in a single ferromagnetic layer. Strong interlayer antiferromagnetic exchange coupling plays a critical role for the high DW velocity since it inhibits the tilting of DW plane with strong Dzyaloshinskii-Moriya interaction. On the other hand, the Walker breakdown of DW motion is also inhibited due to the stabilization of moment orientation under a strong interlayer antiferromagnetic coupling. In theory, the voltage-induced gradient of magnetic anisotropy is proved to be equal to an effective magnetic field that drives DW.

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Source: https://tomesphere.com/paper/1906.04988