Electrical Switching of Tristate Antiferromagnetic N\'eel Order in $\alpha$-Fe$_{2}$O$_{3}$ Epitaxial Films

TL;DR

This paper demonstrates the first convincing electrical switching of tri-state Néel order in $ ext{Fe}_2 ext{O}_3$ antiferromagnetic films, revealing mechanisms and clarifying Hall resistance artifacts, advancing antiferromagnetic spintronics.

Contribution

It introduces a novel electrical switching method for tri-state Néel order in $ ext{Fe}_2 ext{O}_3$ films and clarifies the origin of Hall resistance signals, expanding AF spintronics applications.

Findings

Successful electrical switching of tri-state Néel order in $ ext{Fe}_2 ext{O}_3$ bilayers.

Monte-Carlo simulations elucidate the switching mechanism.

Hall resistance artifacts are distinguished from true AF switching signals.

Abstract

The ability to manipulate antiferromagnetic (AF) moments is a key requirement for the emerging field of antiferromagnetic spintronics. Electrical switching of bi-state AF moments has been demonstrated in metallic AFs, CuMnAs and Mn$_2$Au. Recently, current-induced "saw-tooth" shaped Hall resistance was reported in Pt/NiO bilayers, while its mechanism is under debate. Here, we report the first demonstration of convincing, non-decaying, step-like electrical switching of tri-state N\'eel order in Pt/$\alpha$-Fe$_2$O$_3$ bilayers. Our experimental data, together with Monte-Carlo simulations, reveal the clear mechanism of the switching behavior of $\alpha$-Fe$_2$O$_3$ N\'eel order among three stable states. We also show that the observed "saw-tooth" Hall resistance is due to an artifact of Pt, not AF switching, while the signature of AF switching is step-like Hall signals. This demonstration of electrical control of magnetic moments in AF insulator (AFI) films will greatly expand the scope of AF spintronics by leveraging the large family of AFIs.