# Tunneling interferometry and measurement of thickness of ultrathin metallic Pb(111) films

## TL;DR

This study uses low-temperature tunneling spectroscopy to analyze ultrathin Pb(111) films on Si(111), revealing quantum-confined states and microstructural features that influence their electronic properties.

## Contribution

It demonstrates how tunneling spectroscopy can measure quantum states and microstructure in ultrathin metallic films, providing a method to determine film thickness and analyze substrate effects.

## Key findings

- Identification of local maxima in tunneling conductivity spectra.
- Correlation of spectral features with quantum-confined electron states.
- Visualization of substrate microstructure effects on the film.

## Abstract

Spectra of the differential tunneling conductivity for ultrathin lead films grown on Si(111)7x7 single crystals with a thickness from 9 to 50 monolayers have been studied by low-temperature scanning tunneling microscopy and spectroscopy. The presence of local maxima of the tunneling conductivity is typical for such systems. The energies of maxima of the differential conductivity are determined by the spectrum of quantum-confined states of electrons in a metallic layer and, consequently, the local thickness of the layer. It has been shown that features of the microstructure of substrates, such as steps of monatomic height, structural defects, and inclusions of other materials covered with a lead layer, can be visualized by bias-modulation scanning tunneling spectroscopy.