# Proximity magnetoresistance in graphene induced by magnetic insulators

## TL;DR

This paper reports a giant proximity magnetoresistance effect in graphene induced by magnetic insulators, with significant room-temperature values, demonstrating the potential for spin-polarized currents without direct magnetic injection.

## Contribution

It introduces the observation of large proximity magnetoresistance in graphene using magnetic insulators, expanding possibilities for spintronic applications.

## Key findings

- PMR up to 100% in EuO and EuS
- 77% PMR at room temperature with YIG
- Robust PMR regardless of system size or edge type

## Abstract

We demonstrate the existence of Giant proximity magnetoresistance (PMR) effect in a graphene spin valve where spin polarization is induced by a nearby magnetic insulator. PMR calculations were performed for yttrium iron garnet (YIG), cobalt ferrite (CFO), and two europium chalcogenides EuO and EuS. We find a significant PMR (up to 100%) values defined as a relative change of graphene conductance with respect to parallel and antiparallel alignment of two proximity induced magnetic regions within graphene. Namely, for high Curie temperature (Tc) CFO and YIG insulators which are particularly important for applications, we obtain 22% and 77% at room temperature, respectively. For low Tc chalcogenides, EuO and EuS, the PMR is 100% in both cases. Furthermore, the PMR is robust with respect to system dimensions and edge type termination. Our findings show that it is possible to induce spin polarized currents in graphene with no direct injection through magnetic materials.