# Many-body effects in strongly-disordered III-nitride quantum wells: interplay between carrier localization and Coulomb interaction

## TL;DR

This paper investigates how disorder-induced localization and Coulomb interactions jointly influence the optical properties of III-nitride quantum wells, revealing their combined effect on excitonic features and luminescence behavior.

## Contribution

A novel numerical approach to solve the coupled Schrödinger equation in disordered systems with Coulomb interaction, accurately modeling experimental optical properties of InGaN quantum wells.

## Key findings

- Broadened excitonic absorption peak observed
- Luminescence deviates from bimolecular behavior
- Localization and Coulomb interaction jointly govern optical responses

## Abstract

The joint impact of Anderson localization and many-body interaction is observed in the optical properties of strongly-disordered III-nitride quantum wells, a system where the Coulomb interaction and the fluctuating potential are pronounced effects with similar magnitude. A numerical method is introduced to solve the 6-dimensional coupled Schrodinger equation in the presence of disorder and Coulomb interaction, a challenging numerical task. It accurately reproduces the measured absorption and luminescence dynamics of InGaN quantum wells at room-temperature: absorption spectra reveal the existence of a broadened excitonic peak, and carrier lifetime measurements show that luminescence departs from a conventional bimolecular behavior. These results reveal that luminescence is governed by the interplay between localization and Coulomb interaction, and provide practical insight in the physics of modern light-emitting diodes.