# Point interactions with bias potentials

**Authors:** A.V. Zolotaryuk, G.P. Tsironis, Y. Zolotaryuk

arXiv: 1906.03405 · 2019-06-11

## TL;DR

This paper develops an asymptotic approach to define point interactions in heterostructures with bias potentials, analyzing transmission properties and resonance phenomena in simplified models of electronic devices.

## Contribution

It introduces a novel asymptotic method for modeling biased point interactions, including delta and delta-prime potentials, in heterostructures and electronic devices.

## Key findings

- Resonance peaks depend on system parameters and voltages.
- Transmission peaks occur at specific well depths.
- Heterostructures can act as fully reflecting walls beyond resonances.

## Abstract

We develop an approach on how to define single-point interactions under the application of external fields. The essential feature relies on an asymptotic method based on the one-point approximation of multi-layered heterostructures that are subject to bias potentials. In this approach , the zero-thickness limit of the transmission matrices of specific structures is analyzed and shown to result in matrices connecting the two-sided boundary conditions of the wave function at the origin. The reflection and transmission amplitudes are computed in terms of these matrix elements as well as biased data. Several one-point interaction models of two- and three-terminal devices are elaborated. The typical transistor in the semiconductor physics is modeled in the "squeezed limit'' as a $\delta$- and a $\delta'$-potentialand referred to as a "point" transistor. The basic property of these one-point interaction models is the existence of several extremely sharp peaks as an applied voltage tunes, at which the transmission amplitude is non-zero, while beyond these resonance values, the heterostructure behaves as a fully reflecting wall. The location of these peaks referred to as a "resonance set" is shown to depend on both system parameters and applied voltages. An interesting effect of resonant transmission through a $\delta$-like barrier under the presence of an adjacent well is observed. This transmission occurs at a countable set of the well depth values.

## Full text

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## Figures

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## References

75 references — full list in the complete paper: https://tomesphere.com/paper/1906.03405/full.md

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Source: https://tomesphere.com/paper/1906.03405