# Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Si

## TL;DR

This paper presents two techniques for large-area growth of MoSe2 layers on SiO2/Si, including van der Waals solid phase epitaxy, and demonstrates Mn doping up to 10% for potential spintronic applications.

## Contribution

It introduces van der Waals solid phase epitaxy for large-area MoSe2 multilayers and shows Mn doping integration, advancing TMDC synthesis and functionalization methods.

## Key findings

- Large-area continuous MoSe2 monolayers achieved via molecular beam epitaxy.
- Van der Waals solid phase epitaxy enables multilayer growth over 1 cm^2.
- Mn doping up to 10% successfully incorporated into MoSe2 bilayers.

## Abstract

Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic doping of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an important field of investigation. Here, we have developed two different techniques to grow MoSe$_2$ mono- and multi-layers on SiO$_2$/Si substrates over large areas. First, we co-deposited Mo and Se atoms on SiO$_2$/Si by molecular beam epitaxy in the van der Waals regime to obtain continuous MoSe$_2$ monolayers over 1 cm$^2$. To grow MoSe$_2$ multilayers, we then used the van der Waals solid phase epitaxy which consists in depositing an amorphous Se/Mo bilayer on top of a co-deposited MoSe$_2$ monolayer which serves as a van der Waals growth template. By annealing, we obtained continuous MoSe$_2$ multilayers over 1 cm$^2$. Moreover, by inserting a thin layer of Mn in the stack, we could demonstrate the incorporation of up to 10 \% of Mn in MoSe$_2$ bilayers.