# A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas

## TL;DR

This paper reports on experimental observations of quantized conductance and spin-resolved subbands in an InAs two-dimensional electron gas using a gate-defined quantum point contact, revealing detailed magnetic field effects.

## Contribution

It provides new experimental insights into spin-resolved conductance quantization and subband structure in InAs quantum point contacts under magnetic fields.

## Key findings

- Observation of conductance plateaus at integer multiples of e^2/h
- Visualization of spin-resolved magnetoelectric subbands
- Measurement of subband spacings and g-factor under magnetic fields

## Abstract

We experimentally study quantized conductance in an electrostatically defined constriction in a high-mobility InAs two-dimensional electron gas. A parallel magnetic field lifts the spin degeneracy and allows for the observation of plateaus in integer multiples of $e^2/h$. Upon the application of a perpendicular magnetic field, spin-resolved magnetoelectric subbands are visible. Through finite bias spectroscopy we measure the subband spacings in both parallel and perpendicular direction of the magnetic field and determine the $g$-factor.