# Magnetoresistance in Metallic Ferroelectrics

**Authors:** Jiesu Wang, Hongbao Yao, Kuijuan Jin, Er-Jia Guo, Qinghua Zhang, Chao, Ma, Lin Gu, Pazhanivelu Venkatachalam, Jiali Zhao, Jiaou Wang, Hassen Riahi,, Haizhong Guo, Chen Ge, Can Wang, and Guozhen Yang

arXiv: 1906.01257 · 2019-06-05

## TL;DR

This paper reports the coexistence of ferroelectricity and magnetoresistance in metallic PbNb0.12Ti0.88O3 thin films, revealing unique asymmetric magnetic responses and potential for multifunctional device applications.

## Contribution

It demonstrates the experimental realization of ferroelectricity with magnetic responses in a conducting metallic material, a significant advancement in multiferroic research.

## Key findings

- Negative MR up to 50% observed under in-plane magnetic field
- MR switches to positive when magnetic field is parallel to surface normal
- Unique asymmetric magnetic responses linked to electron spin interactions

## Abstract

Polar metals with ferroelectric-like displacements in metals have been achieved recently, half century later than Anderson and Blount's prediction. However, the genuine ferroelectricity with electrical dipolar switching has not yet been attained experimentally in the conducting materials, especially the ones possessing magnetic responses. Here we report the coexistence of ferroelectricity and magnetoresistance (MR) in the metallic PbNb0.12Ti0.88O3 (PNTO) thin films. We found that the conducting and magnetic responses of PNTO films are highly asymmetric. Negative MR up to 50% is observed under an in-plane magnetic field; the MR switches to positive with the magnetic field applied parallel to the surface normal. Such unique behavior is attributed to the moving electron caused effective magnetic field which couples with the spins of electrons, which form a dynamic multiferroic state in the metallic PNTO. These findings break a path to multiferroic metal and offer a great potential to the multi-functional devices.

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Source: https://tomesphere.com/paper/1906.01257