# Deterministic magnetization switching by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field

## TL;DR

This paper proposes a deterministic, voltage-controlled magnetization switching method in magnetic elements, enabling fast, low-power memory writing by manipulating magnetic anisotropy and Dzyaloshinskii-Moriya interaction under an in-plane magnetic field.

## Contribution

It introduces a novel deterministic switching scheme using voltage control of magnetic properties, distinct from toggle methods, with clarified mechanisms and conditions.

## Key findings

- Switching is deterministic, polarity-dependent, not toggle-based.
- The method enables fast, low-power memory writing.
- Mechanisms and conditions for switching are thoroughly clarified.

## Abstract

Based on the micromagnetic simulations the magnetization switching in a triangle magnetic element by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field is proposed. The proposed switching scheme is not the toggle switching but the deterministic switching where the magnetic state is determined by the polarity of the applied voltage pulse. The mechanism and conditions for the switching are clarified. The results provide a fast and low-power writing method for magnetoresistive random access memories.