Interlayer Charge Transfer and Defect Creation in Type I van der Waals Heterostructures
G. Nayak, S. Lisi, W-L. Liu, T. Jakubczyk, P. Stepanov, F. Donatini,, K. Watanabe, T. Taniguchi, A. Bid, J. Kasprzak, M. Richard, V. Bouchiat, J., Coraux, L. Marty, N. Bendiab, and J. Renard

TL;DR
This study investigates charge transfer and defect formation in type I van der Waals heterostructures, revealing how fabrication methods influence optoelectronic properties and defect-related luminescence at the nanoscale.
Contribution
It demonstrates that fabrication techniques affect defect formation and cathodoluminescence efficiency, emphasizing the importance of interface quality in heterostructures.
Findings
Cathodoluminescence maps reveal nanoscale charge transfer dynamics.
Defects induced by electron beams suppress luminescence.
Pick-up fabrication technique yields more uniform heterostructures.
Abstract
Van der Waals heterostructures give access to a wide variety of new phenomena that emerge thanks to the combination of properties brought in by the constituent layered materials. We show here that owing to an enhanced interaction cross section with electrons in a type I van der Waals heterostructure, made of single layer molybdenum disulphide and thin boron nitride films, electrons and holes created in boron nitride can be transferred to the dichalcogenide where they form electron-hole pairs yielding luminescence. This cathodoluminescence can be mapped with a spatial resolution far exceeding what can be achieved in a typical photoluminescence experiment, and is highly valuable to understand the optoelectronic properties at the nanometer scale. We find that in heterostructures prepared following the mainstream dry transfer technique, cathodoluminescence is locally extinguished, and we…
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Taxonomy
Topics2D Materials and Applications · Graphene research and applications · MXene and MAX Phase Materials
