# Impact of spin transfer torque on the write error rate of a voltage-torque-based magnetoresistive random access memory

## TL;DR

This paper theoretically analyzes how spin transfer torque influences the write error rate in voltage-torque-based MRAM, revealing that STT effects are negligible below certain current densities.

## Contribution

It introduces a macrospin model analysis of STT effects on write error rates in voltage-torque MRAM, identifying the current density threshold where STT becomes significant.

## Key findings

- Write error rate is insensitive to STT below 10^{10} A/m^{2}.
- Derived the characteristic current density (~5×10^{11} A/m^{2}) where STT balances external torque.
- STT can either assist or suppress magnetization precession depending on initial magnetization.

## Abstract

Impact of spin transfer torque (STT) on the write error rate of a voltage-torque-based magnetoresistive random access memory is theoretically analyzed by using the macrospin model. During the voltage pulse the STT assists or suppresses the precessional motion of the magnetization depending on the initial magnetization direction. The characteristic value of the current density is derived by balancing the STT and the external-field torque, which is about 5$\times$ 10$^{11}$ A/m$^{2}$. The results show that the write error rate is insensitive to the STT below the current density of $10^{10}$ A/m$^{2}$.