# Dirac-Electron Behavior for Spin-Up Electrons in Strongly Interacting Graphene on Ferromagnetic Mn$_5$Ge$_3$

## TL;DR

This study demonstrates that in graphene on ferromagnetic Mn$_5$Ge$_3$, only spin-up electrons retain Dirac-like behavior near the Fermi level, revealing potential for spintronic applications due to spin-dependent electronic properties.

## Contribution

The paper introduces a method to synthesize graphene on Mn$_5$Ge$_3$ and shows that only spin-up electrons exhibit Dirac-electron-like behavior, a novel spin-dependent electronic feature.

## Key findings

- Spin-up electrons in graphene preserve Dirac-like behavior near Fermi level.
- Strong exchange splitting observed in the graphene-derived π band.
- Potential application in spintronics due to spin-selective electronic properties.

## Abstract

An elegant approach on the synthesis of graphene on the strong ferromagnetic (FM) material Mn$_5$Ge$_3$ is proposed via intercalation of Mn in the graphene-Ge(111) interface. According to the DFT calculations, graphene in this strongly interacting system demonstrates the large exchange splitting of the graphene-derived $\pi$ band. In this case only spin-up electrons in graphene preserve the Dirac-electron-like character in the vicinity of the Fermi level and the K point, whereas such behavior is not detected for the spin-down electrons. This unique feature of the studied gr/FM-Mn$_5$Ge$_3$ interface which can be prepared on the semiconducting Ge can lead to its application in spintronics.