# Interface moment dynamics and its contribution to spin-transfer torque switching process in magnetic tunnel junctions

## TL;DR

This paper investigates how interface magnetic moment dynamics influence the reliability and switching behavior of perpendicular magnetic tunnel junctions at high bias voltages, revealing a new error mechanism linked to low-frequency microwave emissions.

## Contribution

It identifies the role of interface moment dynamics and low-frequency microwave emissions as key factors affecting switching reliability in magnetic tunnel junctions.

## Key findings

- Error-rise correlates with low-frequency microwave emission.
- Interface regions with concentrated perpendicular anisotropy impact switching.
- Numerical models support the role of interface magnetic dynamics.

## Abstract

A practical problem for memory applications involving perpendicularly magnetized magnetic tunnel junctions is the reliability of switching characteristics at high-bias voltage. Often it has been observed that at high-bias, additional error processes are present that cause a decrease in switching probability upon further increase of bias voltage. We identify the main cause of such error-rise process through examination of switching statistics as a function of bias voltage and applied field, and the junction switching dynamics in real time. These experiments show a coincidental onset of error-rise and the presence of a new low-frequency microwave emission well below that dictated by the anisotropy field. We show that in a few-macrospin coupled numerical model, this is consistent with an interface region with concentrated perpendicular anisotropy, and where the magnetic moment has limited exchange coupling to the rest of the layers. These results point to the important role high-frequency interface magnetic moment dynamics play in determining the switching characteristics of these tunnel junction devices.